NZT753 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – PNP Current Driver Transistor

SMD Type
Transistors
Features
PNP Current Driver Transistor
NZT753
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
IC
TJ, TSTG
PD
RèJA
Rating
-100
-120
-5
-4
- 55 to +150
1.2
9.7
103
Unit
V
V
V
A
W
mW/
/W
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Testconditons
IC = -10mA, IB = 0
IC = -100ìA, IE = 0
IE = -100ìA, IC = 0
VCB = -100V, IE = 0
TA = 100
VEB = -4V, IC = 0
VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -500mA
VCE = -2.0V, IC = -1.0A
IC = -1.0A, IC = -50mA
IC = -1.0A, IB = -100mA
VCE = -2.0V, IC = -1.0A,
VCE = -5V, IC = -100mA, f = 100MHz
*Pulse Test: Pulse Width 300ìs, Duty Cycle 2.0%
Min Typ Max Unit
-100
V
-120
V
-5.0
V
-0.1 ìA
-10 ìA
-0.1 ìA
70
100
300
55
-0.3 V
-1.25 V
-1.0 V
75
MHz
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