NTMS10P02R2 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET -10 Amps, -20 Volts P−Channel Enhancement−Mode Single SO−8 Package

SMD Type
P-Channel MOSFET
NTMS10P02R2 (KTMS10P02R2)
MOSFET
■ Features
● VDS (V) =-20V
● ID =-10 A (VGS =-10V)
● RDS(ON) ＜ 14 mΩ (VGS =-4.5V)
● RDS(ON) ＜ 20mΩ (VGS =-2.5V)
● Diode Exhibits High Speed, Soft Recovery
D
G
S
SOP-8
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Maximum Operating Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Ta = 25℃
Maximum Operating Power Dissipation
Avalanche Energy (Note.2)
TJ = 25°C
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Lead Temperature for Soldering Purposes
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
TJ
TL
Tstg
10 seconds
steady state
-20
±12
-10
-8.8
-8
-6.4
-5.5
-4.5
-50
-44
2.5
1.6
0.6
0.4
500
50
80
150
260
-55 to 150
Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2%.
Note.2: VDD=−20 V, VGS =−4.5V, Peak IL =5A, L = 40 mH, RG = 25Ω
Unit
V
A
W
mJ
℃/W
℃
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