NTA4151P Datasheet, PDF (1/4 Pages) ON Semiconductor – Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89

SMD Type
MOSFET
■ Features
● VDS (V) =-20V
● ID =-760m A (VGS =-4.5V)
● RDS(ON) ＜ 260mΩ (VGS =-4.5V)
● RDS(ON) ＜ 350mΩ (VGS =-2.5V)
● RDS(ON) ＜ 490mΩ (VGS =-1.8V)
P-Channel MOSFET
NTA4151P
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
3
D
0.3±0.05
0.5 +0.1
-0.1
G
S
U nit: m m
0.15±0.05
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
Continuous Drain Current
Pulsed Drain Current @ tp =10 us
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ESD
ID
IDM
PD
RthJA
TL
TJ
Tstg
Rating
-20
±6
1.8
-0.76
-1
301
415
260
150
-55 to 150
Unit
V
KV
A
mW
℃/W
℃
www.kexin.com.cn ¹