NJM13003-1.63_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
■ Features
● High voltage capability
● High speed switching
● Wide SOA
● ROHS compliant
NPN Transistors
NJM13003-1.63
TO-126
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
1.60 ±0.10
0.75 ±0.10
Transistors
Unit:mm
3.25 ±0.20
(1.00)
(0.50)
1.75 ±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
0.50
+0.10
–0.05
1. Base
2. Collector
3. Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
600
400
9
1.5
30
150
-65 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Storage Time
Falling Time
Symbol
Test Conditions
VCBO Ic= 1mA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 1mA， IC= 0
ICBO VCB= 600 V , IE= 0
ICEO VCE= 400 V , IE= 0
IEBO VEB= 8V , IC=0
IC=0.5A, IB=0.1A
VCE(sat)
IC=1.5A, IB=0.5A
VBE(sat) IC=0.5A, IB=0.1A
VCE= 5V, IC= 1mA
hFE VCE= 10V, IC= 0.1A
VCE= 5V, IC= 1.5A
ts
VCC= 5V, IC= 0.25A
tf
Unit
V
A
W
℃
Min Typ Max Unit
600
400
V
9
100
250 uA
10
0.35
0.85 V
1.2
7
10
40
5
1.5
3
us
0.8
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