NDT6N60P Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
N-Channel MOSFET
NDT6N60P
TO-251
MOSFET
■ Features
● VDS (V) = 600V
● ID = 6.2 A (VGS = 10V)
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● Fast switching capability
● Low reverse transfer Capacitance
Drain
1 23
123
Unit: mm
Gate
Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Avalanche Energy
Single Pulsed (Note 1)
Repetitive
Peak Diode Recovery dv/dt
(Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJC
TJ
Tstg
Note.1: L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
Note.2: ISD ≤ 6.2A, di/dt ≤200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
Rating
600
±30
6.2
24.8
6.2
55
440
13
4.5
110
2.27
150
-55 to 150
Unit
V
A
W
mJ
ns
℃/W
℃
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