NDT5N70P Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

DIP Type
N-Channel Enhancement MOSFET
NDT5N70P
MOSFET
■ Features
● VDS (V) = 700V
● ID = 5.0 A (VGS = 10V)
● RDS(ON) ＜ 1.8Ω (VGS = 10V)
● High Current, High Speed Switching
D
G
S
TO-251
1 23
123
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note1)
Tc=25℃
Tc=100℃
Repetitive Pulse Avalanche Energy (Note2)
Single Pulse Avalanche Energy (Note2)
Peak Diode Recovery dv/dt (Note3)
Power Dissipation
Tc=25℃
Derate above 25℃
Thermal Resistance.Junction- to-Ambient (Note1)
Thermal Resistance.Junction- to-Case (Note1)
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
EAR
EAS
dv/dt
PD
RthJA
RthJC
TJ
Tstg
Rating
700
±30
5.0
3.15
20
11.2
186
4.5
112
0.89
110
1.12
150
-55 to 150
Unit
V
A
mJ
mJ
V/ns
W
W/℃
℃/W
℃
Note.1 Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C
Note.2 L=13.8mH, IAS=5.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Note.3 ISD ≤5.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25 Ω,Starting TJ=25°C
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