NDT50N03 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
NDT50N03
MOSFET
■ Features
● VDS (V) = 30V
● ID = 90 A (VGS = 10V)
● RDS(ON) ＜ 5.7mΩ (VGS = 10V)
D
● RDS(ON) ＜ 7.8mΩ (VGS = 4.5V)
G
S
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc=25℃ *1&5
Continuous Drain Current (TJ=70℃)
Tc=70℃ *1&5
Ta=25℃ *2&3
Pulsed Drain Current
Ta=70℃ *2&3
Avalanche Current Pulse
Single Pulse Avalanche Energy
L=0.1mH
Tc=25℃
Power Dissipation
Tc=70℃
Ta=25℃ *2&3
Ta=70℃ *2&3
Thermal Resistance.Junction- to-Ambient t ≤ 10sec *2&4
Thermal Resistance.Junction- to-Case Steady State
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
RthJC
TJ
Tstg
Rating
30
±20
90
75
30
25
100
45
101
83
58
10
7
15
1.8
175
-55 to 175
*1: Based on TC = 25℃.
*2: Surface mounted on 1” x 1” FR4 board.
*3: t = 10 sec
*4: Maximum under steady state conditions is 50 ℃/W.
*5: Calculated based on maximum junction temperature. Package limitation current is 50 A.
Unit
V
A
mJ
W
℃/W
℃
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