NDT4N70 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
NDT4N70
MOSFET
■ Features
● VDS (V) = 700V
● ID = 4.2 A (VGS = 10V)
● RDS(ON) ＜ 2.15Ω (VGS = 10V)
2.Drain
1.Gate
3.Source
TO-252
6.50+ 0.15
- 0.15
5.30+ 0.2
- 0.2
Unit: mm
2.30+ 0.1
- 0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note1)
Avalanche Current (Note1)
Repetitive Pulse Avalanche Energy (Note1)
Single Pulse Avalanche Energy (Note2)
Peak Diode Recovery dv/dt (Note3)
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Operating Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
PD
RthJA
RthJC
TJ
Topr
Tstg
Rating
700
±30
4.2
17.6
4.2
10.6
260
4.5
49
110
2.55
150
-55 to 150
-55 to 150
Note.1 Repetitive Rating : Pulse width limited by maximum junction temperature
Note.2 L=26.9mH, IAS=4.2A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Note.3 ISD ≤4.2A, di/dt≤200A/us, VDD≤BVdss, Starting TJ=25°C
Unit
V
A
mJ
mJ
V/ns
W
℃/W
℃
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