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NDT4N65P Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET | |||
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DIP Type
N-Channel Enhancement MOSFET
NDT4N65P (KDT4N65P)
MOSFET
â Features
â VDS (V) = 650V
â ID = 3.0 A (VGS = 10V)
â RDS(ON) ï¼ 3Ω (VGS = 10V)
TO-251
D
1 23
G
S
123
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
( *a)
( *a)
Ta=25â
Ta=100â
Power Dissipation
Ta=25â
Derate above 25â
Single Pulsed Avalanche Energy ( *b)
Repetitive Avalanche Energy
( *a)
Peak Diode Recovery dv/dt
( *c)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance.Case-to-Sink Typ
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJC
RthJS
TL
TJ
Tstg
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25â
c.ISDâ¤4.5A,di/dtâ¤200A/us,VDDâ¤BVDSS,Starting TJ=25â
Unit: mm
Rating
650
±30
3.0
1.8
12
4.5
58
0.46
210
5.8
4.5
110
2.16
50
300
150
-55 to 150
Unit
V
A
W
W/â
mJ
V/ns
â/W
â
www.kexin.com.cn 1
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