NDT4N65 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
NDT4N65 (KDT4N65)
MOSFET
■ Features
● VDS (V) = 650V
● ID = 3.0 A (VGS = 10V)
● RDS(ON) ＜ 3Ω (VGS = 10V)
D
G
S
TO-252
6.50 +0.15
-0.15
5.30 +0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80 +0.1
-0.1
0.127
max
2.3
4.60 ^+0.15
-0.15
0.60+0.1
-0.1
1 GATE
2 DRAIN
3 SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
( *a)
( *a)
Ta=25℃
Ta=100℃
Power Dissipation
Ta=25℃
Derate above 25℃
Single Pulsed Avalanche Energy ( *b)
Repetitive Avalanche Energy
( *a)
Peak Diode Recovery dv/dt
( *c)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance.Case-to-Sink Typ
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJC
RthJS
TL
TJ
Tstg
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
c.ISD≤4.5A,di/dt≤200A/us,VDD≤BVDSS,Starting TJ=25℃
Rating
650
±30
3.0
1.8
12
4.5
58
0.46
210
5.8
4.5
110
2.16
50
300
150
-55 to 150
Unit
V
A
W
W/℃
mJ
V/ns
℃/W
℃
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