NDT4N60 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
NDT4N60
MOSFET
■ Features
● VDS (V) = 600V
● ID = 3.9 A (VGS = 10V)
● RDS(ON) ＜ 1.2Ω (VGS = 10V)
● Low effective output capacitance
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Tc=25℃
Tc=70℃
Single Pulsed Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Tc=25℃
- Derate above 25°C
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Maximum Lead Temperature for Soldering Purpose
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAS
EAR
dv/dt
PD
RthJA
RthJC
TL
TJ
Tstg
Note.1: IAS = 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
Rating
600
±30
3.9
2.5
11.7
3.9
128
5
4.5
50
0.4
83
2.5
300
150
-55 to 150
Unit
V
A
mJ
V/ns
W
W/℃
℃/W
℃
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