NDT4N20L Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
NDT4N20L
MOSFET
■ Features
● VDS (V) = 200V
● ID = 1 A (VGS = 10V)
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● RDS(ON) ＜ 1.55Ω (VGS = 5V)
● Low gate charge
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Gate
2.Drain
3.Source
4.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Tc=25℃
Tc=70℃
Avalanche Current, Repetetive Or Not Repetetive
Power Dissipation
Single Pulse Avalanche Energy
(Note.1)
Tc=25℃
Peak Diode Recovery Voltage Slope (Note.2)
Thermal Resistance.Junction- to-Ambient (Note.3)
Thermal Resistance.Junction- to-Case
(Note.4)
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
dv/dt
RthJA
RthJC
TJ
Tstg
Note.1:Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Note.2: Isd ≤ 1 A, di/dt ≤ 200 A/μs, VDD ≤ 80% V(BR)DSS.
Note.3: When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec).
Note.4: When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec).
Rating
200
±20
1
0.63
4
1
3.3
90
20
62.5
38
150
-55 to 150
Unit
V
A
W
mJ
V/ns
℃/W
℃
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