NDT35N06 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
NDT35N06
MOSFET
■ Features
● VDS (V) = 60V
● ID = 35 A
● RDS(ON) ＜ 23mΩ (VGS = 10V)
2,4
● RDS(ON) ＜ 33mΩ (VGS = 4.5V)
● RDS(ON) ＜ 37mΩ (VGS = 4V)
1
3
TO-252
6.50+ 0.15
- 0.15
5.30+ 0.2
- 0.2
4
2.30+ 0.1
- 0.1
0.50 + 0.8
- 0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4.60^{+ 0.15}
- 0.15
0.60+ 0.1
- 0.1
1 : Gate
2 : Drain
3 : Source
4 : Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Avalanche Current (Note.2)
Avalanche Energy (Single Pulse) (Note.3)
Power Dissipation Tc=25°C
Junction Temperature
Storage Temperature Range
Note.1 :PW ≤ 10 us, duty cycle ≤ 1%
Note.2 :L≤100μH, Single pulse
Note.3 :VDD=10V, L=100μH, IAV=18A
Symbol
Rating
Unit
VDS
60
V
VGS
±20
ID
35
IDP
105
A
IAV
18
EAS
19
mJ
PD
40
W
TJ
150
℃
Tstg
-55 to 150
www.kexin.com.cn ¹