NDT2955 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – P-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
P-Channel MOSFET
NDT2955 (KDT2955)
■ Features
● VDS (V) =-60V
● ID =-2.5 A (VGS =-10V)
● RDS(ON) ＜ 300mΩ (VGS =-10V)
● RDS(ON) ＜ 500mΩ (VGS =-4.5V)
D
G
D
S
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Gate
2.Drain
3.Source
4.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note.1)
Pulsed Drain Current
(Note.1)
Power Dissipation
(Note.2)
(Note.3)
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Note.1: 42°C/W when mounted on a 1in² pad of 2 oz copper
Note.2: 95°C/W when mounted on a .0066 in² pad of 2 oz copper
Note.3: 110°C/W when mounted on a minimum pad.
Rating
-60
±20
-2.5
-15
3
1.3
1.1
42
12
150
-55 to 150
Unit
V
A
W
℃/W
℃
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