NDT25N06 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
NDT25N06
MOSFET
■ Features
● VDS (V) = 60V
● ID = 25 A (VGS = 10V)
● RDS(ON) ＜ 65mΩ (VGS = 10V)
● High Current Capability
● Low Gate Charge
2.Drain
1.Gate
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS=20kΩ)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (Note.1)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Tc=25℃
Tc=100℃
Note.1: starting TJ =25°C, ID =25A, VDD =25 V
Symbol
VDS
VDGR
VGS
ID
IDM
PD
EAS
RthJA
RthJC
TJ
Tstg
Rating
60
60
±20
25
17
100
41
100
100
3
150
-65 to 150
Unit
V
A
W
mJ
℃/W
℃
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