NDT1N70 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
NDT1N70
MOSFET
■ Features
● VDS (V) = 700V
● ID = 1.2 A (VGS = 10V)
● RDS(ON) ＜ 13.5Ω (VGS = 10V)
● Fast switching capability
1.Gate
2.Drain
3.Source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
(Note.1)
Avalanche Energy
Single Pulsed (Note.2)
Repetitive (Note.1)
Peak Diode Recovery dv/dt (Note.3)
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAS
EAR
dv/dt
PD
RthJA
RthJC
TJ
Tstg
Rating
700
±30
1.2
4.8
1.2
50
4
4.5
3
79
29
150
-55 to 150
Note.1: Repetitive Rating: Pulse width limited by maximum junction temperature
Note.2: L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
Note.3: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
Unit
V
A
mJ
V/ns
W
℃/W
℃
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