NDT15N10 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
NDT15N10
MOSFET
■ Features
● RDS(ON) = 80mΩ @VGS = 10V,ID=8A
● Low gate charge (Typ=24nC)
● Low CRSS (Typ=23pF)
● High switching speed
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1. Gate
2. Drain
3. Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TC=25℃,TJ=150℃
TC=70℃,TJ=150℃
Power Dissipation
TC=25℃
TC=70℃
Thermal Resistance.Junction- to-Case (Note.1)
Junction Temperature
Storage Temperature Range
Note.1: The device mounted on 1in ² FR4 board with 2 oz copper.
Symbol
VDS
VGS
ID
IDM
PD
RthJC
TJ
Tstg
Rating
100
±20
14.7
13.6
59
34.7
22.2
3.6
150
-55 to 150
Unit
V
A
W
℃/W
℃
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