MMSTA56_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMSTA56 (KMSTA56)
Transistors
■ Features
● Small Surface Mount Package
● General Poupose for Amplification
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
-80
-80
-4
-500
200
625
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE= 0
VCEO Ic= -1 mA， IB= 0
VEBO IE= -100μA， IC= 0
ICBO VCB= -80 V , IE= 0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
VBE VCE= -1V, IC= -100mA
hFE(1) VCE= -1V, IC= -10mA
hFE(2) VCE= -1V, IC= -100mA
fT
VCE= -1V, IC= -100mA,f=100MHz
Min Typ Max Unit
-80
-80
V
-4
-100
nA
-100
-0.25
-1.2 V
-1.2
50
50
50
MHz
■ Marking
Marking
K2G
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