MMSTA42_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MMSTA42 (KMSTA42)
Transistors
■ Features
● High Breakdown Voltage
● Low Collector-Emitter Saturation Voltage
● Complementary to MMSTA92
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
RΘJA
TJ
Tstg
Rating
300
300
5
200
500
300
417
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
1.Base
2.Emitter
3.Collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=20 mA, IB=2mA
VBE(sat) IC=20 mA, IB=2mA
hFE(1) VCE= 10V, IC= 1mA
hFE(2) VCE= 10V, IC= 10mA
hFE(3) VCE= 10V, IC= 30mA
fT
VCE= 20V, IC= 10mA,f=30MHz
Min Typ Max Unit
300
300
V
5
0.25
uA
0.1
0.2
V
0.9
60
100
200
75
50
MHz
■ Marking
Marking
K3M
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