MMST5551_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MMST5551 (KMST5551)
Transistors
■ Features
● Small Surface Mount Package
● Ideal for Medium Power Amplification and Switching
● Complementary to MMST5401
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
180
160
6
600
200
625
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0 (Note.1)
VEBO IE= 100μA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 4V , IC=0
IC=10 mA, IB=1mA
VCE(sat)
IC= 50 mA, IB= 5mA
IC=10 mA, IB=1mA
VBE(sat)
IC= 50 mA, IB= 5mA
hFE(1) VCE= 5V, IC= 1mA
hFE(2) VCE= 5V, IC= 10mA
hFE(3) VCE= 5V, IC= 50mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 10mA,f=100MHz
Note.1: Pulse test: pulse width ≤300 us,duty cycle≤ 2 %.
Min Typ Max Unit
180
160
V
6
50
nA
50
0.15
0.2
V
1
1
80
80
300
30
6 pF
100
300 MHz
■ Marking
Marking
K4N
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