MMST5401_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMST5401 (KMST5401)
Transistors
■ Features
● Small Surface Mount Package
● Ideal for Medium Power Amplificationand Switching
● Complementary to MMST5551
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
-160
-150
-5
-600
200
625
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
1.Base
2.Emitter
3.Collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE= 0
VCEO Ic= -1 mA， IB= 0
VEBO IE= -100μA， IC= 0
ICBO VCB= -120 V , IE= 0
IEBO VEB= -3V , IC=0
IC=-10 mA, IB=-1mA
VCE(sat)
IC= -50 mA, IB= -5mA
IC=-10 mA, IB=-1mA
VBE(sat)
IC= -50 mA, IB= -5mA
hFE(1) VCE= -5V, IC= -1mA
hFE(2) VCE= -5V, IC= -10mA
hFE(3) VCE= -5V, IC=- 50mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -10mA,f=100MHz
■ Marking
Marking
K4M
Min Typ Max Unit
-160
-150
V
-5
-50
nA
-50
-0.2
-0.5
V
-1
-1
50
60
300
50
6 pF
100
MHz
www.kexin.com.cn ¹