MMST4403_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMST4403 (KMST4403)
Transistors
■ Features
● Collector Current Capability IC=-0.6A
● Collector Emitter Voltage VCEO=-40V
● Complementary to MMST4401
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-40
-40
-5
-0.6
200
625
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
ICEO VCE= -35 V , IB= 0V
IEBO VEB= -5V , IC=0
IC=-150 mA, IB=-15mA
VCE(sat)
IC=-500 mA, IB=-50mA
IC=-150 mA, IB=-15mA
VBE(sat)
IC=-500 mA, IB=-50mA
hFE(1) VCE= -1V, IC= -0.1mA
hFE(2) VCE=- 1V, IC= -1mA
hFE(3) VCE=- 1V, IC= -10mA
hFE(4) VCE=- 2V, IC= -150mA
hFE(5) VCE=- 2V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IC= -20mA,f=100MHz
■ Marking
Marking
K3T
Unit
V
A
mW
℃/W
℃
1.Base
2.Emitter
3.Collector
Min Typ Max Unit
-40
-40
V
-5
-100
-500 nA
-100
-0.4
-0.75
V
-0.95
-1.3
30
60
100
100
300
20
8.5 pF
200
MHz
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