MMDT3906_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMDT3906 (KMDT3906)
Transistors
■ Features
● Epitaxial planar die construction
● Ideal for low power amplification and switching
● Dual PNP Transistors
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-40
VCEO
-40
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-200
mA
Collector Power Dissipation
PC
150
mW
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
RθJA
TJ
Tstg
625
150
-55 to 150
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
VCBO
VCEO
Ic= -100 μA， IE=0
Ic= -1 mA， IB=0
-40
-40
V
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
-5
Collector-base cut-off current
Collector- emittercut-off current
ICBO
ICEX
VCB= -40 V , IE=0
VCE= -30 V , VEB(OFF)= 3V
-100
-50 nA
Emitter cut-off current
IEBO VEB= -5V , IC=0
-50
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat)
VBE(sat)
IC=-10 mA, IB=-1mA
IC=-50 mA, IB=-5mA
IC=-10 mA, IB=-1mA
IC=-50 mA, IB=-5mA
-0.65
-0.25
-0.4
V
-0.85
-0.95
DC current gain
hFE(1)
hFE(2)
VCE= -1V, IC= -0.1mA
VCE=- 1V, IC= -10mA
60
100
300
hFE(3) VCE=- 1V, IC= -50mA
60
Delay time
Rise time
Storage time
Fall time
td
VCC=-3V, VBE= 0.5V
tr
IC=-10mA , IB1=-IB2=-1mA
ts
VCC=-3V, IC=-10mA , IB1=-IB2=-1mA
tf
35
35
ns
225
75
Noise figure
NF VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1KΩ
4 dB
Collector output capacitance
Cob VCB= -5V, IC= -0.1mA,f=1MHz,Rg=1KΩ
4.5 pF
Transition frequency
■ Marking
Marking
K3N
fT
VCE= -20V, IC= -10mA,f=100MHz
250
MHz
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