MMDT3904_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MMDT3904 (KMDT3904)
Transistors
■ Features
● Epitaxial planar die construction
● Ideal for low power amplification and switching
● Dual NPN Transistors
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
40
V
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， IB=0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC=0
Collector-base cut-off current
ICBO VCB= 60 V , IE=0
Collector- emittercut-off current
ICEX VCE= 30 V , VEB(OFF)= -3V
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
IC=10 mA, IB=1mA
VCE(sat)
IC=50 mA, IB=5mA
Base - emitter saturation voltage
IC=10 mA, IB=1mA
VBE(sat)
IC=50 mA, IB=5mA
hFE(1) VCE= 1V, IC= 0.1mA
DC current gain
hFE(2) VCE= 1V, IC= 10mA
hFE(3) VCE= 1V, IC= 50mA
Delay time
Rise time
td
VCC=3V, VBE= - 0.5V
tr
IC=10mA , IB1=-IB2=1mA
Storage time
Fall time
ts
VCC=3V, IC=10mA , IB1=-IB2=1mA
tf
Noise figure
NF VCE=5V,Ic=0.1mA,f=1KHz,RS=1KΩ
Collector output capacitance
Cob VCB= 5V, IE= 0,f=1MHz,f=100MHz
Transition frequency
fT
VCE= 20V, IC= 10mA,f=100MHz
■ Marking
Marking
K6N
Min Typ Max Unit
60
40
V
5
50
50 nA
50
0.2
0.3
V
0.65
0.85
0.95
40
100
300
60
35
35
ns
200
50
5 dB
4 pF
300
MHz
www.kexin.com.cn ¹