MMBTA94_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
■ Features
● High Breakdown Voltage
●Complement to MMBTA44
PNP Transistors
MMBTA94 (KMBTA94)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current -Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
RΘJA
TJ
Tstg
Rating
-400
-400
-5
-200
-300
350
150
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -400 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat)1 IC=-10 mA, IB=-1mA
VCE(sat)2 IC=-50 mA, IB=-5mA
VBE(sat) IC= -10mA, IB=- 1mA
hFE(1) VCE= -10V, IC= -10mA
hFE(2) VCE= -10V, IC= -1mA
hFE(3) VCE= -10V, IC= -100mA
hFE(4) VCE= -10V, IC= -50mA
fT VCE= -20V, IC= 10mA,f=30MHz
Min Typ Max Unit
-400
-400
V
-5
-100
nA
-100
-0.2
-0.3 V
-0.75
80
300
70
40
40
50
MHz
■ Classification of hfe(1)
Type
MMBTA94
MMBTA94-L
Range
80-300
100-200
Marking
4D
www.kexin.com.cn ¹