MMBTA92-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMBTA92 (KMBTA92)
Transistors
■ Features
● High voltage transistor
● Low collector-emitter saturation voltage
● Complementary to MMBTA42 (NPN)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-300
-300
-5
-500
350
417
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -200 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-20 mA, IB=- 2mA
VBE(sat) IC= -20mA, IB= -2mA
hfe（1） VCE= -10V, IC= -1mA
hfe（2） VCE= -10V, IC= -10mA
hfe（3） VCE= -10V, IC=-30mA
fT VCE= -20V, IC= -10mA,f=30MHz
Min Typ Max Unit
-300
-300
V
-5
-0.25
uA
-0.1
-0.2
V
-0.9
60
100
300
60
50
MHz
■ Classification of hfe(2)
Type
Range
Marking
MMBTA92
MMBTA92-L
100-300
100-200
2D
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