MMBTA44-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
■ Features
● High Collector-Emitter Voltage
● Complement to MMBTA94
NPN Transistors
MMBTA44 (KMBTA44)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current -Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
RθJA
TJ
Tstg
Rating
400
400
6
200
300
350
357
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage *1
VCBO
VCEO
Ic= 100 μA， IE= 0
Ic= 1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 400 V , IE= 0
Emitter cut-off current
IEBO VEB= 4V , IC=0
Collector-emitter saturation voltage *1
VCE(sat)1 IC=10 mA, IB=1mA
VCE(sat)2 IC=50 mA, IB=5mA
Base - emitter saturation voltage *1
VBE(sat) IC=10 mA, IB=1mA
hFE(1) VCE= 10V, IC= 1mA
DC current gain *1
hFE(2)
hFE(3)
VCE= 10V, IC= 10mA
VCE= 10V, IC= 50mA
hFE(4) VCE= 10V, IC= 100mA
Collector output capacitance
Cob VCB= 20V, IE= 0,f=1MHz
Transition frequency
fT VCE=20, IC= 10mA,f=30MHz
*1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
■ Classification of hfe(2)
Type
MMBTA44
MMBTA44-L
Range
80-300
100-200
Marking
3D
Min Typ Max Unit
400
400
V
6
100
nA
100
0.2
0.3 V
0.75
50
80
300
40
40
7 pF
50
MHz
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