MMBTA42W_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MMBTA42W (KMBTA42W)
Transistors
■ Features
● Collector-emitter voltage VCE = 300V
● Collector current IC = 500mA
● NPN high voltage transistors
1
BASE
3
COLLECTOR
2
EMITTER
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation (Note.1)
Thermal resi stance from junct ion to ambient (Note.1)
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
300
300
6
500
150
550
150
-65 to 150
Note.1:Mounted on an FR4 PCB, single-sided copper, mini pad.
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=20 mA, IB=2mA
VBE(sat) IC=20 mA, IB=2mA
hFE(1) VCE= 10V, IC= 1mA
hFE(2) VCE= 10V, IC= 10mA
hFE(3) VCE= 10V, IC= 30mA
Cob VCB= 20V, IE= 0,f=1MHz
fT
VCE= 20V, IC= 10mA,f=100MHz
■ Marking
Marking
1D
Unit
V
mA
mW
℃/W
℃
Min Typ Max Unit
300
300
V
6
100
nA
100
0.5
V
0.9
60
100
200
70
3
pF
50
MHz
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