MMBTA42-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MMBTA42-HF (KMBTA42-HF)
Transistors
Features
High Voltage Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current-Peak
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
RθJA
TJ
Tstg
Rating
300
300
5
0.3
0.5
0.35
357
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 200V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=20 mA, IB=2mA
VBE(sat) IC= 20mA, IB= 2mA
hFE(1) VCE= 10V, IC= 1mA
hFE(2) VCE= 10V, IC= 10mA
hFE(3) VCE= 10V, IC= 30mA
fT VCE= 20V, IC= 10mA,f=30MHz
Marking
Marking
1D F
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit
V
A
A
W
℃/W
℃
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Min Typ Max Unit
300
300
V
5
0.25
μA
0.1
0.2
V
0.9
60
100
200
60
50
MHz
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