MMBTA06-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
MMBTA06 (KMBTA06)
■ Features
● For Switching and Amplifier Applications
● Complementary to MMBTA56
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
80
80
4
500
300
416
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 80 V , IE= 0
ICES VCE= 60 V , IE= 0
IEBO VEB= 3V , IC=0
VCE(sat) IC=100 mA, IB=10mA
VBE(sat) IC=100 mA, IB=10mA
hFE(1) VCE= 1V, IC= 10mA
hFE(2) VCE= 1V, IC= 100mA
fT
VCE= 2V, IC= 10mA,f=100MHz
Min Typ Max Unit
80
80
V
4
100
100 nA
100
0.25
V
1.2
100
400
100
100
MHz
■ Marking
Marking
1G*
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