MMBT6520_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMBT6520 (KMBT6520)
Transistors
■ Features
● Collector-Emitter Voltage: VCEO= -350V
● High Voltage Transistor
1
BASE
3
COLLECTOR
2
EMITTER
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Total Device Dissipation FR– 5 Board (Note.1)
Derate above 25 °C
Total Device Dissipation Alumina Substrate (Note.2)
Derate above 25 °C
(Note.1)
Thermal Resistance, Junction to Ambient
(Note.2)
Junction Temperature
Storage Temperature range
Note.1: FR–5 = 1.0 x 0.75 x 0.062 in.
Note.2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
PD
RθJA
TJ
Tstg
Rating
-350
-350
-5
-500
-250
225
1.8
300
2.4
556
417
150
-55 to 150
Unit
V
mA
mW
mW/℃
mW
mW/℃
℃/W
℃
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