MMBT4401_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
MMBT4401 (KMBT4401)
■ Features
● Ideal for Medium Power Amplification and Switching
● Complementary PNP Type Available (MMBT4403)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Device Dissipation Alumina Substrate
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, Tstg
Rating
60
40
6.0
600
300
417
-55 to150
1.Base
2.Emitter
3.collector
Unit
V
V
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
V(BR)CBO IC = 100μA, IE = 0
V(BR)CEO IC = 1.0 mA, IB = 0
V(BR)EBO IE =100μA, IC = 0
ICBO VCB=50 V, IE=0
IEBO VEB=5V, IC=0
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
hFE IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
VCE(sat)
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
VBE(sat)
IC = 500 mA, IB = 50 mA
fT
IC = 20 mA, VCE = 10 V, f = 100 MHz
td
VCC = 30 V, VEB = 2.0 V,
tr
IC = 150 mA, IB1 = 15 mA
ts
VCC = 30 V, IC = 150 mA,
tf
IB1 = IB2 = 15 mA
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
■ Marking
Marking
2X
Min Typ Max
60
40
6.0
0.1
0.1
20
40
80
100
300
40
0.4
0.75
0.75
0.95
1.2
250
15
20
225
30
Unit
V
V
V
μA
μA
V
V
MHz
ns
ns
ns
ns
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