MMBT3906_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMBT3906 (KMBT3906)
Transistors
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
Features
● Complementary to MMBT3904
● Marking: 2A
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-40
VCEO
-40
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector Power Dissipation
IC
-0.2
A
PC
0.2
W
Junction Temperature
Storage Temperature range
Electrical Characteristics Ta = 25
TJ
150
℃
Tstg
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Collector input capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-40
VCEO Ic= -1 mA， IB=0
-40
V
VEBO IE= -100μA， IC=0
-6
ICBO VCB= -40 V , IE=0
-100
ICEX VCE=- 30 V , VEB(off）=3V
-50 nA
IEBO VEB= -5V , IC=0
-100
VCE(sat)
VBE(sat)
IC=-10 mA, IB=- 1mA
IC=-50 mA, IB= -5mA
IC= -10 mA, IB= -1mA
IC= -50 mA, IB= -5mA
-0.65
-0.2
-0.3
V
-0.85
-0.95
hfe（1） VCE= -1V, IC= -10mA
100
300
hfe（2） VCE= -1V, IC=-50mA
60
hfe（3） VCE= -1V, IC=-100mA
30
td
VCC=-3.0V,VBE=0.5V
35
tr
IC=-10mA,IB1=-1.0mA
ts
VCC=-3.0V,IC=-10mA
35
ns
225
tf
IB1=IB2=-1.0mA
75
Cib VEB= -0.5V, IE= 0,f=1MHz
Cob VCB= -5V, IE= 0,f=1MHz
10
pF
4.5
fT VCE= -20V, IC= -10mA,f=100MHz 250
MHz
■ Classification of hfe(1)
Type
MMBT3906
Range
100-300
MMBT3906-L MMBT3906-H
100-200
200-300
www.kexin.com.cn ¹