MMBT3906-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
MMBT3906-HF (KMBT3906-HF)
Transistors
Features
●Complementary to MMBT3904
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-40
-40
-5
-0.2
0.2
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Transition frequency
■ Marking
Marking
2A F
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
ICEX VCE=- 30 V , VEB(off）=3V
IEBO VEB= -5V , IC=0
IC=-10 mA, IB=- 1mA
VCE(sat)
IC=-50 mA, IB= -5mA
IC= -10 mA, IB= -1mA
VBE(sat)
IC= -50 mA, IB= -5mA
hfe（1） VCE= -1V, IC= -10mA
hfe（2） VCE= -1V, IC=-50mA
hfe（3） VCE= -1V, IC=-100mA
td
VCC=-3.0V,VBE=0.5V
tr
IC=-10mA,IB1=-1.0mA
ts
VCC=-3.0V,IC=-10mA
tf
IB1=IB2=-1.0mA
fT
VCE= -20V, IC= -10mA,f=100MHz
Unit
V
A
W
℃
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-40
-40
V
-6
-100
-50 nA
-100
-0.2
-0.65
-0.3
V
-0.85
-0.95
100
300
60
30
35
35
ns
225
75
250
MHz
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