MMBT3904-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MMBT3904-HF (KMBT3904-HF)
Transistors
Features
●Complementary to MMBT3906
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
60
40
6
0.2
0.2
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Transition frequency
■ Marking
Marking
1AM F
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60 V , IE= 0
ICEX VCE= 30 V , VEB(off）=- 3V
IEBO VEB= 5V , IC=0
IC= 10 mA, IB= 1mA
VCE(sat)
IC= 50 mA, IB= 5mA
IC= 10 mA, IB= 1mA
VBE(sat)
IC= 50 mA, IB= 5mA
hfe（1） VCE= 1V, IC= 10mA
hfe（2） VCE= 1V, IC= 50mA
hfe（3） VCE= 1V, IC= 100mA
td
VCC= 3V, VBE(off)=- 0.5V
tr
IC= 10mA, IB1= 1mA
ts
VCC= 3V, IC= 10mA
tf
IB1=IB2= 1mA
fT
VCE= 20V, IC= 10mA, f=100MHz
Unit
V
V
V
A
W
Min Typ Max Unit
60
40
V
6
100
50 nA
100
0.2
0.3
V
0.65
0.85
0.95
100
300
60
30
35
35
ns
200
50
300
MHz
1.Base
2.Emitter
3.collector
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