MMBT2907A-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP T ransistors

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PNP Transistors
MMBT2907A (KMBT2907A)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
■
●
●
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-60
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
600
mA
Power Dissipation
PD
250
mW
Thermal resistance from junction to ambient
RθJA
500
℃/W
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO IC = -100 μA, IE = 0
Collector-Emitter Breakdown Voltage*
V(BR)CEO IC = -10 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IE = -100μA, IC = 0
Collector Cutoff Current
ICBO
VCB = -50 V, IE = 0
Collector Cutoff Current
ICEX
VCE = -30 V,VEB(off) =0.5V
VCE=-10V,IC=-0.1mA
DC Current Gain
VCE=-10V,IC=-1mA
hFE
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
Collector-Emitter Saturation Voltage *
VCE(sat)
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
Base-Emitter Saturation Voltage *
VBE(sat)
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
Current Gain - Bandwidth Product
fT
VCE=-20V,IC=-50mA,f=100MHz
Delay Time
Rise Time
td
VCC = -30 V, IC = -150 mA,IB1 = -15 mA
tr
Storage Time
Fall Time
ts
VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15
tf
mA
* Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2.0%
■ Marking
Marking
2F
1. Base
2. Emitter
3. Collector
Min Max Unit
-60
V
-60
V
-5
V
-20 nA
-50 nA
75
100
100
100 300
50
-0.4 V
-1.6 V
-1.3 V
-2.6 V
200
MHz
10 ns
40 ns
80 ns
30 ns
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