MJD47 Datasheet, PDF (1/1 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

SMD Type
Transistors
NPN Epitaxial Silicon Transistor
MJD47;MJD50
Features
Load Formed for Surface Mount Application
Straight Lead
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Voltage MJD47
MJD50
Collector-Emitter Voltage MJD47
MJD50
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25 )
Collector Dissipation (Ta=25 )
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
350
V
VCBO
500
V
250
V
VCEO
400
V
VEBO
5
V
IC
1
A
ICP
2
A
IB
0.6
A
15
W
PC
1.56
W
TJ
150
TSTG
-65 to 150
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage * MJD47
MJD50
Collector Cut-off Current
MJD47
MJD50
Collector Cut-off Current
MJD47
MJD50
Emitter Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
*Pulse Test: PW 300ìs, Duty Cycle 2%
Symbol
Testconditons
VCEO(sus) IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
fT
VCE = 150V, IB = 0
VCE = 300V, IB = 0
VCE = 350, VEB = 0
VCE = 500, VEB = 0
VBE = 5V, IC = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 10A, IC = 1A
VCE =10V, IC = 0.2A
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
250
V
400
V
0.2 mA
0.2 mA
0.1 mA
0.1 mA
1 mA
30
150
10
1
V
1.5 V
10
MHz
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