MJD350 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – High Voltage Power Transistors D-PAK for Surface Mount Applications

SMD Type
Transistors
PNP Epitaxial Silicon Transistor
MJD350
Features
Load Formed for Surface Mount Application
Straight Lead
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC = 25 )
Collector Dissipation (Ta = 25 )
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-300
V
VCEO
-300
V
VEBO
-3
V
IC
-0.5
A
ICP
-0.75
A
15
A
PC
1.56
W
TJ
150
W
TSTG
-65 to 150
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage *
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
*Pulse Test: PW 300ìs, Duty Cycle 2%
Symbol
VCEO(sus)
ICEO
IEBO
hFE
Testconditons
IC = 1mA, IB = 0
VCB = -300V, IE =0
VEB = -3V, IC = 0
VCE = -10V, IC = -50mA
Min Typ Max Unit
-300
V
-0.1 mA
-0.1 mA
30
240
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