MJD13003_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MJD13003
Transistors
■ Features
● Collector Current Capability IC=1.5A
● Collector Emitter Voltage VCEO=400V
● Power Switching Applications
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
700
VCEO
400
V
VEBO
9
IC
1.5
A
PC
0.5
W
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 1 mA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 10 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 1 mA， IC= 0
Collector-base cut-off current
ICBO VCB= 700 V , IE= 0
Collector- emitter cut-off current
ICEO VCE= 400 V , IE= 0
Emitter cut-off current
IEBO VEB= 9V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=1 A, IB=250mA
Base - emitter saturation voltage
VBE(sat) IC=1 A, IB=250mA
DC current gain
hFE(1)
hFE(2)
VCE= 5V, IC= 0.5A
VCE= 5V, IC= 1.5A
Fall time
tf
IC=1A,IB1=-IB2=0.2A ,VCC=100V
Storage time
ts
IC=250mA
Transition frequency
fT VCE= 10V, IC= 100mA,f=1MHz
Min Typ Max Unit
700
400
V
9
1
0.5 mA
1
0.6
V
1.2
10
40
5
0.5
uS
2
4
5
MHz
■ Classification of hfe(1)
Rank
A
Range
10-15
B
15-20
C
20-25
D
25-30
E
30-35
F
35-40
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