MJD13002_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
■ Features
● Power Switching Applications
NPN Transistors
MJD13002
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
600
VCEO
400
V
VEBO
6
IC
800
mA
PC
300
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Fall time
Storage time
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 600 V , IE= 0
ICEO VCE= 400 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=200 mA, IB=40mA
VBE(sat) IC=200 mA, IB=40mA
hFE(1) VCE= 10V, IC= 200mA
hFE(2) VCE= 10V, IC= 0.25 mA
tf
IC=1A, IB1=-IB2=0.2A
ts
VCC=100V
fT
VCE= 10V, IC= 100mA,f=1MHz
Min Typ Max Unit
600
400
V
6
100
100 uA
100
0.5
V
1.1
9
40
5
0.5
uS
2.5
5
MHz
■ Classification of hfe(1)
Type
Range
Marking
MJD13002-A
9-15
3002A
MJD13002-B
15-20
3002B
MJD13002-C
20-25
3002C
MJD13002-D
25-30
3002D
MJD13002-E MJD13002-F
30-35
35-40
3002E
3002F
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