MJD13001_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
MJD13001
Transistors
■ Features
● Power switching applications
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
700
VCEO
400
V
VEBO
8
IC
200
mA
PC
300
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Rail time
Storage time
Transition frequency
■ Classification of hfe(1)
Symbol
Test Conditions
VCBO Ic= 1 mA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 600 V , IE= 0
ICEO VCE= 400 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=50 mA, IB=10mA
VBE(sat) IC=50 mA, IB=10mA
hFE(1) VCE= 20V, IC= 20mA
hFE(2) VCE= 10V, IC= 0.25mA
hFE(3) VCE= 10V, IC= 500mA
tr
IC= 100mA
ts
fT VCE= 20V, IC= 20mA,f=1MHz
Min Typ Max Unit
700
400
V
8
100
100 uA
100
0.4
V
1.1
10
40
5
1
0.9
uS
0.9
2.4
8
MHz
Type
Range
Marking
MJD13001-A
10-15
3001A
MJD13001-B
15-20
3001B
MJD13001-C
20-25
3001C
MJD13001-D
25-30
3001D
MJD13001-E
30-35
3001E
MJD13001-F
35-40
3001F
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