MCK22-8 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Sensitive Gate Silicon Controlled Rectifiers

SMD Type
SCR Thyristor
MCK22-8
Thyristor
1.70 0.1
■ Features
● Repetitive peak off-state voltages :600V
● R.M.S On-State Current ( IT(RMS)= 1.5 A )
● Low On-State Voltage (1.2V(Typ.)@ITM)
○
2. Anode
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Forward Voltages
Reverse Peak Gate Voltage
Average On-State Current @ Tc =99 °C
RMS on-state Current
Surge On-State Current @ 1/2 Cycle, 60Hz
Circuit Fusing Considerations @ t=8.3ms
Forward Peak Gate Current
Reverse Peak Gate Voltage
Peak Gate Power @ Pulse Width ≤ 1us
Average Gate Power @ t=8.3ms
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
junction Temperature
Storage Temperature range
3. Gate
○
○
1. Cathode
Symbol
VDRM
VRGM
IT(AV)
IT(RMS)
ITSM
I²t
IFGM
VRGM
PGM
PG(AV)
RthJA
RthJC
TJ
Tstg
0.42 0.1
0.46 0.1
Rating
Unit
600
V
5
1
1.5
A
15
0.9
A²s
0.2
A
5
V
0.5
W
0.1
125
K/W
15
125
℃
-40 to 150
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Parameter
Non-Trigger Gate Voltage (Note.1)
On-state Voltage
(Note.1)
Gate Trigger Voltage
Repetitive Peak Off-State Current
Gate Trigger Current
Holding Current
Symbol
Test Conditions
Min Typ. Max Unit
VGD VAK = 12 V, RL=100 Ω ,Tc = 125 °C
0.2
VTM IT=3A
VD=7V, RL=100Ω,Tc = 25 °C
VGT
Tc = -40 °C
1.7
V
0.8
1.2
IDRM
IGT
VAK = VDRM or VRRM, RGK = 1000 Ω,Tc = 25 °C
Tc = 125 °C
VD=6 V, RL=100Ω, Tc = 25 °C
Tc = -40 °C
10
200
uA
200
500
VAK = 12 V, Gate Open Tc = 25 °C
IH
Tc = -40 °C
5
mA
10
Critical Rate of rise of off-state Voltage
dv /dt
VGM = 0.67VDRM, TJ = 125 °C
Exponential waveform , RGK = 1000 Ω
200
V/us
Critical Rate of Rise On-State Current
di/dt ITM = 3A, Ig = 10mA
50 A/us
Note.1:Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
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