MBRF20100ACT Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

DIP Type
Schottky Diodes
MBRF20100ACT
Diodes
■ Features
● Low forward voltage drop
● High frequency properties and switching speed
● Guard ring for over-voltage protection
1. Anode 2.Cathode 3. Anode
TO-220F
10.16 0.20
(7.00)
ø3.18 0.10
Unit:mm
2.54 0.20
(0.70)
(1.00x45 )
MAX1.47
0.80 0.10
#1
0.35 0.10
2.54TYP
[2.54 0.20]
(30 ₎
2.54TYP
[2.54 0.20]
9.40 0.20
0.50
+0.10
–0.05
2.76 0.20
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Repetitive Reverse Voltage
DC Reverse Voltage
VRRM
100
V
VR
100
DC Forward Current Tc = 105℃
IF(AV)
16
A
Peak forward surge current @ 60Hz Sine Half-Sine Wave
IFSM
140
Junction Temperature
Storage temperature range
TJ
150
℃
Tstg
-65 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage (Note.1)
Reverse voltage leakage current (Note.1)
Symbol
Test Conditions
VRM ID= 200uA
IF= 8 A ,Tc=25℃
VF
IF= 8 A ,Tc=125℃
Tc= 25℃
IR
Tc=100℃
Note.1: Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Min Typ Max Unit
100
V
850
mV
740
0.1
mA
50
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