MBRD1035C Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

SMD Type
Schottky Diodes
MBRD1035C (KBRD1035C)
Diodes
■ Features
● Highly Stable Oxide Passivated Junction
● High dv/dt Capability
● Very Low Forward Voltage Drop
● Epoxy Meets UL 94 V−0 @ 0.125 in
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
1
2
2.3
0.60+ 0.1
- 0.1
3
4 .60 +0.15
-0.15
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current - Per Leg
Tc = 115°C
- Per Package
Non−Repetitive Peak Surge Current @ 60Hz
Peak Repetitive Forward Current @ 20KHz, Tc = 115°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature range
Symbol
VRRM
VRWM
VR
IO
IFSM
IFRM
dv/dt
RθJA
RθJC
TJ
Tstg
Rating
35
5
10
50
10
10000
137
3
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage (Note.1)
Reverse voltage leakage current (Note.1)
Symbol
Test Conditions
VR IR= 100 uA
IF= 5 A , TJ = 25℃
IF= 5 A , TJ = 100℃
VF
IF= 10 A , TJ = 25℃
IF= 10 A , TJ = 100℃
VR= 35 V , TJ = 25℃
VR= 35 V , TJ = 100℃
IR
VR= 17.5 V , TJ = 25℃
VR= 17.5 V , TJ = 100℃
Note.1: Pulse Test: Pulse Width ≤ 250 us, Duty Cycle ≤ 2.0%
■ Marking
Marking
B10
35C**
Unit
V
A
V/us
℃/W
℃/W
℃
Min Typ Max Unit
35
0.47
0.41 V
0.56
0.55
2
30
mA
0.2
5
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