MBR20100V Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

DIP Type
Schottky Diodes
MBR20100V
TO-22O
■ Features
● Common cathode structure
● Low power loss, high efficiency
● High Operating Junction Temperature
● Guard ring for overvoltage protection，High reliability
Diodes
TO-22OHF
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Reverse Voltage
VRM
DC blocking voltage
VDC
Average Forward Current (Tc=125℃ TO-220)
IFAV
(Tc=125℃ TO-220HF)
Peak Forward Surge Current
IFSM
Thermal Resistance Junction to Case TO-220
TO-220HF
RθJC
Junction Temperature
TJ
Storage Temperature range
Tstg
Rating
100
100
20
10
200
1.9
2.5
175
-40 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
Reverse voltage leakage current
Symbol
Test Conditions
IF= 10 A TJ=25℃
IF= 10 A TJ=125℃
VF
IF= 15 A TJ=25℃
IF= 15 A TJ=125℃
VR= VRRM TJ=25℃
IR
VR= VRRM TJ=125℃
Unit
V
A
℃/W
℃
Min Typ Max Unit
0.65 0.68
0.54 0.58
V
0.73 0.78
0.6 0.65
50 uA
30 mA
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