MBR20100U Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

DIP Type
Schottky Diodes
MBR20100U
TO-22O
■ Features
● Common cathode structure
● Low power loss, high efficiency
● High Operating Junction Temperature
● Guard ring for overvoltage protection，High reliability
TO-22OB
Diodes
TO-22OHF
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse Voltage
DC blocking voltage
Average Forward Current (Tc=150℃ TO-220)
(Tc=125℃ TO 2-20HF)
Peak Forward Surge Current
Thermal Resistance Junction to Case TO-220
TO-220B
TO-220HF
Junction Temperature
Storage Temperature range
Symbol
VRM
VDC
IFAV
IFSM
RθJC
TJ
Tstg
Rating
100
100
20
10
200
1.9
1.9
2.5
175
-40 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Forward voltage
Reverse voltage leakage current
IF= 10 A TJ=25℃
IF= 10 A TJ=125℃
VF
IF= 15 A TJ=25℃
IF= 15 A TJ=125℃
VR= VRRM TJ=25℃
IR
VR= VRRM TJ=125℃
Unit
V
A
℃/W
℃
Min Typ Max Unit
0.69 0.73
0.57 0.62
V
0.75 0.8
0.62 0.7
20 uA
5 mA
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