MBR20100F Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Barrier Diodes

DIP Type
Diodes
Schottky Barrier Diodes
MBR20100F
■ Features
● LOW VF.
● High Operating Junction Temperature.
● High Switching Speed.
● High Reliability.
1
3
2, 4
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
1.47max
2.54typ
2.54typ
2.76 ±0.20
0.80 ±0.20
0.50 ±0.20
■ Absolute Maximum Ratings Ta = 25℃
Parameter
DC Blocking Voltage @ Ir=0.2mA
DC Forward Current
Peak forward surge current
Junction Temperature
Storage temperature range
Symbol
Rating
Unit
VRRM
100
V
IF(AV)
10
A
IFSM
150
TJ
175
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Symbol
Test Conditions
VRM IR= 0.2 m A
Forward voltage
Reverse voltage leakage current
VF IF= 10 A ,Tc=25℃ (Note.1)
IR VR= 100V,Tc=25℃(Note.1)
Note.1: Pulse Test: Pulse Width = 300 us, Duty Cycle ≤ 2.0%.
Min Typ Max Unit
100
V
850 mV
10 uA
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