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MA2ZV03 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
SMD Type
Silicon Epitaxial Planar Diode
MA2ZV03
Diodes
Features
Good linearity and large capacitance-ratio in CD-VR relation
Small series resistance rD
S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute M axim um R atings T a = 25
Param eter
Reverse voltage (DC)
Junction tem perature
Storage tem perature
Sym bol
VR
Tj
T stg
V a lu e
6
150
-55 to +150
U n it
V
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 5 V
10
nA
Diode capacitance
CD(1V)
CD(4V)
f = 1 MHz;VR = 1 V
5.2
f = 1 MHz;VR = 4 V
2.1
5.8
pF
2.58
Capacitance ratio
CD(1V)/CD(4V)
2.1
2.6
Series resistance *
rs
VR = 4 pF, f = 470 MHz
1.9
0.3
Note :
1 Rated input/output frequency: 470 MHz
2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Marking
Marking
7Z
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