KXT5551 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Surface Mount NPN Silicon Transistor

SMD Type
Transistors
Surface Mount NPN Silicon Transistor
KXT5551 (CXT5551)
SOT-89
Features
High current (max. 500mA).
Low voltage (max. 150 V).
4.50+0.1
-0.1
1.80+0.1
-0.1
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
thermal resistance Junction-to-ambient
Junction temperature
Storage temperature
3.00+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
PD
R JA
Tj
Tstg
Rating
180
160
6
600
1.2
104
150
-65 to +150
Unit
V
V
V
mA
W
/W
1. Base
2. Collector
3. Emiitter
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC=100 A
VCEO IC=1.0mA
VEBO IE=10 A
ICBO
VCB = 120 V, IE = 0
VCB = 120 V, TA=100
IC = 1.0 mA; VCE = 5.0 V
hFE IC = 10mA; VCE = 5.0V
IC = 50 mA; VCE = 5.0V
IC = 10 mA; IB = 1.0mA
VCE(sat)
IC = 50 mA; IB = 5.0mA
IC = 10 mA; IB = 1.0mA
VBE(sat)
IC = 50 mA; IB = 5.0mA
Cob VCB = 10 V, IE = 0,f=1.0MHz
fT IC = 10 mA; VCE =10V; f = 100 MHz
Min Typ Max Unit
180
V
160
V
6.0
V
50 nA
50
A
80
80
250
30
0.15 V
0.20 V
1.00 V
1.00 V
6.0 pF
100
300 MHz
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