KXT5401 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Surface Mount PNP Silicon Transistor

SMD Type
Transistors
Surface Mount PNP Silicon Transistor
KXT5401 (CXT5401)
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Features
High current (max. 500mA).
Low voltage (max. 150 V).
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
thermal resistance Junction- to-ambient
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Output capacitance
Transition frequency
3.00+0.1
-0.1
1. Base
2. Collector
3. Emiitter
Symbol
VCBO
VCEO
VEBO
IC
PD
R JA
Tj
Tstg
Rating
-160
-150
-5
-500
1.2
104
150
-65 to +150
Unit
V
V
V
mA
W
/W
Symbol
Testconditons
Min Typ Max Unit
VCBO IC=-100 A
-160
V
VCEO IC=-1.0mA
-150
V
VEBO IE=-10 A
-5.0
V
ICBO
VCB =- 120 V, IE = 0
VCB =- 120 V, TA=100
-50 nA
-50
A
IC = -1.0 mA; VCE = -5.0 V
50
hFE IC = -10mA; VCE =- 5.0V
60
240
IC = -50 mA; VCE = -5.0V
50
IC =- 10 mA; IB = -1.0mA
VCE(sat)
IC = -50 mA; IB = -5.0mA
-0.2 V
-0.5 V
IC = -10 mA; IB = -1.0mA
VBE(sat)
IC = -50 mA; IB =- 5.0mA
-1.0 V
-1.0 V
Cob VCB =-10 V, IE = 0,f=1.0MHz
6.0 pF
fT IC = -10 mA; VCE =-10V; f = 100 MHz 100
300 MHz
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